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Transistor
2SD0965 (2SD965)
Silicon NPN epitaxial planer type
For low-frequency power amplification For stroboscope
5.00.2
Unit: mm
4.00.2
G G
I Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25C)
Ratings 40 20 7 8 5 0.75 150 -55 ~ +150 Unit V V V A A W C C
2.540.15 123 0.45 -0.1 1.27
+0.2
13.50.5
Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply.
5.10.2
I Features
0.45 -0.1
1.27
+0.2
2.30.2
1:Emitter 2:Collector 3:Base JEDEC:TO-92 EIAJ:SC-43A
I Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25C)
Symbol ICBO ICEO IEBO VCEO VEBO hFE1 hFE2 VCE(sat) fT Cob
*1
Conditions VCB = 10V, IE = 0 VCE = 10V, IB = 0 VEB = 7V, IC = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 2V, IC = 0.5A*2 VCE = 2V, IC = 2A*2 IC = 3A, IB = 0.1A*2 VCB = 6V, IE = -50mA, f = 200MHz VCB = 20V, IE = 0, f = 1MHz
min
typ
max 0.1 1.0 0.1
Unit A A A V V
20 7 230 150 1 150 50
*2
600
V MHz pF
Pulse measurement
*1h FE1
Rank classification
Q 230 ~ 380 R 340 ~ 600
Rank hFE1
Note.) The Part number in the Parenthesis shows conventional part number.
1
Transistor
PC -- Ta
1.0 2.4 Ta=25C IB=7mA 6mA 1.6 5mA 1.2 4mA 3mA 0.8 2mA 0.4
2SD0965
IC -- VCE
6 VCE=2V 5 25C
IC -- VBE
Collector power dissipation PC (W)
Collector current IC (A)
Collector current IC (A)
0.8
2.0
Ta=75C 4
-25C
0.6
3
0.4
2
0.2
1mA
1
0 0 20 40 60 80 100 120 140 160
0 0 0.4 0.8 1.2 1.6 2.0 2.4
0 0 0.4 0.8 1.2 1.6 2.0
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03
VBE(sat) -- IC
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=30 100 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C IC/IB=30 600
hFE -- IC
VCE=2V Ta=25C 500 Ta=75C 400 25C 300 -25C 200
Ta=75C 25C -25C
25C
Forward current transfer ratio hFE
3 10
100
0.1
0.3
1
3
10
0.1
0.3
1
0 0.01 0.03
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
fT -- I E
400 350 300 250 200 150 100 50 0 - 0.01 - 0.03 - 0.1 - 0.3 100
Cob -- VCB
Collector output capacitance Cob (pF)
VCB=6V Ta=25C IE=0 f=1MHz Ta=25C
Area of safe operation (ASO)
100 30 Single pulse Ta=25C
Transition frequency fT (MHz)
Collector current IC (A)
80
10 ICP IC 3 t=1s 1 0.3 0.1 0.03 t=10ms
60
40
20
0 -1 -3 -10 1 3 10 30 100
0.01 0.1
0.3
1
3
10
30
100
Emitter current IE (A)
Collector to base voltage VCB (V)
Collector to emitter voltage VCE (V)
2
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A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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